Initial stages of etching of the silicon Si{100} (2 .times. 1) surface by 3.0-eV normal incident fluorine atoms: a molecular dynamics study-Reference-Cited by-同舟云学术

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Initial stages of etching of the silicon Si{100} (2 .times. 1) surface by 3.0-eV normal incident fluorine atoms: a molecular dynamics study

Published:1991-10 Issue:22 Volume:113 Page:8221-8228
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

Schoolcraft Tracy A.,Garrison Barbara J.

Publisher

American Chemical Society (ACS)

Subject

Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis

Link

https://pubs.acs.org/doi/pdf/10.1021/ja00022a005

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