An Essential Mechanism of Heat Dissipation in Carbon Nanotube Electronics-Reference-Cited by-同舟云学术

An Essential Mechanism of Heat Dissipation in Carbon Nanotube Electronics

Published:2009-03-31 Issue:5 Volume:9 Page:1850-1855
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Rotkin Slava V.¹,Perebeinos Vasili¹,Petrov Alexey G.¹,Avouris Phaedon¹

Affiliation:

1. Physics Department, Lehigh University, 16 Memorial Drive East, Bethlehem, Pennsylvania 18015, Center for Advanced Materials and Nanotechnology, Lehigh University, 5 East Packer Avenue, Bethlehem, Pennsylvania 18015, IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598, and Ioffe Institute, 26 Polytekhnicheskaya, St. Petersburg, 194021, Russia

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl803835z

Reference36 articles.

1. The International Technology Roadmap for Semiconductors, 2007.

2. Handbook of Nanoscience, Engineering, and Technology

3. Near-field radiative heat transfer and noncontact friction

4. Thermal exchange between two black bodies follows the Stefan−Boltzmann law and at far-field zone the thermalconductivity(per NT length) is described by the equationgSB= (A/L)(π2kB4)/(60ℏ3c2)(T14−T24)/(T1−T2), hereT1,2are the NT and substrate temperatures (giving two fluxes in the opposite directions), the channel area per unit length can be estimated asA/L= 2πR, whereRis a tube radius. In the case of a near room temperature environment (T1= 400 K andT2= 300 K), we obtain:gSB∼ 10− 7W/(K·m), which is much smaller than the bare phonon thermal conductivity in the range ofgo∼ 0.05−0.2 W/(K·m).

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