Improved Transfer Quality of CVD-Grown Graphene by Ultrasonic Processing of Target Substrates: Applications for Ultra-fast Laser Photonics-Reference-Cited by-同舟云学术

Improved Transfer Quality of CVD-Grown Graphene by Ultrasonic Processing of Target Substrates: Applications for Ultra-fast Laser Photonics

Published:2013-10-09 Issue:20 Volume:5 Page:10288-10293
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zheng Guanpeng¹,Chen Yu¹,Huang Huihui²,Zhao Chujun¹,Lu Shunbin¹,Chen Shuqing¹,Zhang Han¹,Wen Shuangchun¹

Affiliation:

1. Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education, College of Physics and Microelectronic Science, Hunan University, Changsha 410082, P. R. China

2. College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am403205v

Reference32 articles.

1. Graphene: carbon in two dimensions

2. Transformation of the Electrical Characteristics of Graphene Field-Effect Transistors with Fluoropolymer

3. Improved Transfer of Graphene for Gated Schottky-Junction, Vertical, Organic, Field-Effect Transistors

4. Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

5. Mobility in graphene double gate field effect transistors

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