Roughening in Electronic Growth of Ag on Si(111)-(7×7) Surfaces
Author:
Affiliation:
1. Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/am402258q
Reference32 articles.
1. Adsorption of group-V elements on III–V (1 1 0) surfaces
2. The adsorption of Ag on the Si(111) 7×7 surface at room temperature studied by medium energy ion scattering, LEED and AES
3. RHEED intensity oscillation during epitaxial growth of Ag on Si(111) surfaces at low temperature
4. Low-temperature, flux-independent epitaxy in Ag/Si(111)
5. Low‐temperature scanning tunneling microscopy study of nucleation, percolation, and growth of ultrathin Ag films on Si(111)7×7
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