Anisotropic Thermal Expansion Behavior of Thin Films of Polymethylsilsesquioxane, a Spin-on-Glass Dielectric for High-Performance Integrated Circuits-Reference-Cited by-同舟云学术

Anisotropic Thermal Expansion Behavior of Thin Films of Polymethylsilsesquioxane, a Spin-on-Glass Dielectric for High-Performance Integrated Circuits

Published:2004-06-26 Issue:16 Volume:20 Page:6932-6939
ISSN:0743-7463
Container-title:Langmuir
language:en
Short-container-title:Langmuir

Author:

Oh Weontae¹,Ree Moonhor¹

Affiliation:

1. Department of Chemistry, Center for Integrated Molecular Systems, BK21 Program, Division of Molecular and Life Sciences, and Polymer Research Institute, Pohang University of Science & Technology, San 31, Hyoja-dong, Pohang 790-784, Republic of Korea

Publisher

American Chemical Society (ACS)

Subject

Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/la049581m

Reference62 articles.

1. Generalized formula for curvature radius and layer stresses caused by thermal strain in semiconductor multilayer structures

2. (b)The National TechnologyRoadmapfor Semiconductors:Technology Needs; Semiconductor Industry Association: San Jose, CA, 1997; p 101.

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