A New Route toward Semiconductor Nanospintronics: Highly Mn-Doped GaAs Nanowires Realized by Ion-Implantation under Dynamic Annealing Conditions-Reference-Cited by-同舟云学术

A New Route toward Semiconductor Nanospintronics: Highly Mn-Doped GaAs Nanowires Realized by Ion-Implantation under Dynamic Annealing Conditions

Published:2011-08-22 Issue:9 Volume:11 Page:3935-3940
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Borschel Christian¹,Messing Maria E.²,Borgström Magnus T.²,Paschoal Waldomiro²,Wallentin Jesper²,Kumar Sandeep²,Mergenthaler Kilian²,Deppert Knut²,Canali Carlo M.³,Pettersson Håkan²⁴,Samuelson Lars²,Ronning Carsten¹

Affiliation:

1. Institute for Solid State Physics, Jena University, Max-Wien-Platz 1, 07743 Jena, Germany

2. Solid State Physics/The Nanometer Structure Consortium, Lund University, Box 118, SE-221 00 Lund, Sweden

3. Division of Physics, School of Computer Science, Physics and Mathematics, Linnæus University, 39233 Kalmar-Sweden

4. Department of Mathematics, Physics, and Electrical Engineering, Halmstad University, Box 823, SE-301 18, Halmstad, Sweden

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl2021653

Reference42 articles.

1. (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

2. Controlled formation of nanoscale MnAs magnetic clusters in GaAs

3. Formation of nanoscale ferromagnetic MnAs crystallites in low-temperature grown GaAs

4. High Performance Silicon Nanowire Field Effect Transistors

5. Schottky-Gated Probe-Free ZnO Nanowire Biosensor

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