s–d Electronic Interaction Induced H2 Dissociation on the γ-U(100) Surface and Influences of Niobium Doping-Reference-Cited by-同舟云学术

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s–d Electronic Interaction Induced H2 Dissociation on the γ-U(100) Surface and Influences of Niobium Doping

Published:2011-11-08 Issue:47 Volume:115 Page:23381-23386
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Yang Yu¹,Zhang Ping¹,Shi Peng²,Wang Xiaolin³

Affiliation:

1. LCP, Institute of Applied Physics and Computational Mathematics, P.O. Box 8009, Beijing 100088, People’s Republic of China

2. National Key Laboratory for Surface Physics and Chemistry, Mianyang 621907, China

3. China Academy of Engineering Physics, Mianyang 621900, China

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp206750q

Reference46 articles.

1. The dissociation of diatomic molecules at surfaces

2. Experimental observation of quantum oscillation of surface chemical reactivities

3. Surface migration of ‘‘hot’’ adatoms in the course of dissociative chemisorption of oxygen on Al(111)

4. Interaction of oxygen with Al(111) studied by scanning tunneling microscopy

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