Significantly Improved Luminescence Properties of Nitrogen-Polar (0001̅) InGaN Multiple Quantum Wells Grown by Pulsed Metalorganic Chemical Vapor Deposition-Reference-Cited by-同舟云学术

Significantly Improved Luminescence Properties of Nitrogen-Polar (0001̅) InGaN Multiple Quantum Wells Grown by Pulsed Metalorganic Chemical Vapor Deposition

Published:2014-12-22 Issue:1 Volume:7 Page:273-278
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Song Jie¹,Chang Shih-Pang¹²,Zhang Cheng¹,Hsu Ta-Cheng³,Han Jung¹

Affiliation:

1. Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, United States

2. Department of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu, Taiwan 300, Republic of China

3. R&D Division, Epistar Co., Ltd., Science-based Industrial Park, Hsinchu, Taiwan 300, Republic of China

Funder

Epistar Corporation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am506162z

Reference23 articles.

1. Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition

2. Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes

3. Growth and characterization of N-polar InGaN∕GaN multiquantum wells

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. X-Rays Diffraction Study of InGaN/GaN Heterostructures Grown by MOCVD Technique at Different Temperatures;Defect and Diffusion Forum;2023-05-31

2. Suppressing the zincblende-phase inclusions in nitrogen-polar wurtzite-phase InGaN films by pulsed metalorganic chemical vapor deposition;Micro and Nanostructures;2022-04

3. Inverted N-polar blue and blue-green light emitting diodes with high power grown by metalorganic chemical vapor deposition;Applied Physics Letters;2022-03-07

4. Cathodoluminescence spatially resolves optical transitions in thick group-III and N-polar InGaN films;Journal of Applied Physics;2020-11-07

5. High quality N-polar GaN films grown with varied V/III ratios by metal–organic vapor phase epitaxy;RSC Advances;2020