Mechanically-Induced Resistive Switching in Ferroelectric Tunnel Junctions-Reference-Cited by-同舟云学术

Mechanically-Induced Resistive Switching in Ferroelectric Tunnel Junctions

Published:2012-11-26 Issue:12 Volume:12 Page:6289-6292
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Lu H.¹,Kim D. J.¹,Bark C.-W.²,Ryu S.²,Eom C. B.²,Tsymbal E. Y.¹,Gruverman A.¹

Affiliation:

1. Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588, United States

2. Department of Materials Science and Engineering, University of Wisconsin—Madison, Madison, Wisconsin 53706, United States

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl303396n

Reference19 articles.

1. Tunneling Across a Ferroelectric

2. Ferroelectric and multiferroic tunnel junctions

3. Reversible electrical switching of spin polarization in multiferroic tunnel junctions

4. Crossing an Interface: Ferroelectric Control of Tunnel Currents in Magnetic Complex Oxide Heterostructures

5. Giant tunnel electroresistance for non-destructive readout of ferroelectric states

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