Charge Trapping States at the SiO2–Oligothiophene Monolayer Interface in Field Effect Transistors Studied by Kelvin Probe Force Microscopy-Reference-Cited by-同舟云学术

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Charge Trapping States at the SiO2–Oligothiophene Monolayer Interface in Field Effect Transistors Studied by Kelvin Probe Force Microscopy

Published:2013-08-29 Issue:9 Volume:7 Page:8258-8265
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Zhang Yingjie¹²,Ziegler Dominik³,Salmeron Miquel¹⁴

Affiliation:

1. Materials Sciences Division, Lawrence Berkeley National Laboratory, California, United States

2. Applied Science and Technology Graduate Program, University of California, Berkeley, California, United States

3. Molecular Foundry, Lawrence Berkeley National Laboratory, California, United States

4. Materials Science and Engineering Department, University of California, Berkeley, California, United States

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn403750h

Reference36 articles.

1. Organic Field-Effect Transistors

2. Molecular Reorganization in Organic Field-Effect Transistors and Its Effect on Two-Dimensional Charge Transport Pathways

3. Device Physics of Solution-Processed Organic Field-Effect Transistors

4. Large Scale Pattern Graphene Electrode for High Performance in Transparent Organic Single Crystal Field-Effect Transistors

5. Direct Observation and Measurement of Mobile Charge Carriers in a Monolayer Organic Semiconductor on a Dielectric Substrate

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