Si-Based Metal–Insulator–Semiconductor Structures with RuO2–(IrO2) Films for Photoelectrochemical Water Oxidation-Reference-Cited by-同舟云学术

Si-Based Metal–Insulator–Semiconductor Structures with RuO2–(IrO2) Films for Photoelectrochemical Water Oxidation

Published:2021-10-08 Issue:10 Volume:4 Page:11162-11172
ISSN:2574-0962
Container-title:ACS Applied Energy Materials
language:en
Short-container-title:ACS Appl. Energy Mater.

Author:

Sahoo Prangya P.¹^ORCID,Mikolášek Miroslav²,Hušeková Kristína¹³,Dobročka Edmund³,Šoltýs Ján³,Ondrejka Peter²,Kemény Martin²,Harmatha Ladislav²,Mičušík Matej⁴,Fröhlich Karol¹³^ORCID

Affiliation:

1. Centre for Advanced Materials Application, Slovak Academy of Sciences, Dúbravská cesta 5807/9, Bratislava 845 11, Slovakia

2. Institute of Electronics and Photonics, Slovak University of Technology, Ilkovičova 3, Bratislava 812 19, Slovakia

3. Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava 841 04, Slovakia

4. Polymer Institute, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava 845 41, Slovakia

Funder

Vedeck?? Grantov?? Agent??ra M??VVa?? SR a SAV

European Regional Development Fund

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Materials Chemistry,Electrochemistry,Energy Engineering and Power Technology,Chemical Engineering (miscellaneous)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaem.1c02021

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