Rear Interface Modification by the ZnTe Layer Enables High-Efficient Cu2(Zn,Cd)SnS4 Thin-Film Solar Cells-Reference-Cited by-同舟云学术

Rear Interface Modification by the ZnTe Layer Enables High-Efficient Cu2(Zn,Cd)SnS4 Thin-Film Solar Cells

Published:2021-11-17 Issue:12 Volume:4 Page:14425-14431
ISSN:2574-0962
Container-title:ACS Applied Energy Materials
language:en
Short-container-title:ACS Appl. Energy Mater.

Author:

Wang Shijin¹²,Huang Lan²,Zhong Lan²,Zhi Zong¹²,Li Jianmin¹^ORCID,Xiao Xudong¹²

Affiliation:

1. Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, China

2. Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong 999077, China

Funder

General Research Fund

Theme-based Research Scheme

Fujian Provincial Engineering Technology Research Center of Solar Energy Conversion and Energy Storage

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Materials Chemistry,Electrochemistry,Energy Engineering and Power Technology,Chemical Engineering (miscellaneous)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaem.1c03104

Reference32 articles.

1. A Detrimental Reaction at the Molybdenum Back Contact in Cu2ZnSn(S,Se)4 Thin-Film Solar Cells

2. Crystalline silicon solar cells: Better than ever

3. Exceeding 20% efficiency with in situ group V doping in polycrystalline CdTe solar cells

4. Cd-Free Cu(In,Ga)(Se,S)2 Thin-Film Solar Cell With Record Efficiency of 23.35%

5. Cu2ZnSnS4 solar cells with over 10% power conversion efficiency enabled by heterojunction heat treatment

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