Trap-Assisted Dopant Compensation Prevents Shunting in Poly-Si Passivating Interdigitated Back Contact Silicon Solar Cells-Reference-Cited by-同舟云学术

Trap-Assisted Dopant Compensation Prevents Shunting in Poly-Si Passivating Interdigitated Back Contact Silicon Solar Cells

Published:2021-09-02 Issue:10 Volume:4 Page:10774-10782
ISSN:2574-0962
Container-title:ACS Applied Energy Materials
language:en
Short-container-title:ACS Appl. Energy Mater.

Author:

Hartenstein Matthew B.¹²^ORCID,Stetson Caleb¹²^ORCID,Nemeth William²,LaSalvia Vincenzo²,Harvey Steven P.²^ORCID,Theingi San²,Page Matthew²,Jiang Chun-Sheng²^ORCID,Al-Jassim Mowafak M.²,Young David L.²,Agarwal Sumit¹²^ORCID,Stradins Paul¹²

Affiliation:

1. Colorado School of Mines, Golden, Colorado 80401, United States

2. National Renewable Energy Laboratory, Golden, Colorado 80401, United States

Funder

National Renewable Energy Laboratory

Solar Energy Technologies Program

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Materials Chemistry,Electrochemistry,Energy Engineering and Power Technology,Chemical Engineering (miscellaneous)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaem.1c01775

Reference57 articles.

1. Metz, A.; Fischer, M.; Trube, J. International technology roadmap for photovoltaics (ITRPV): Crystalline silicon technology-current status and outlook. Proceedings of the PV Manufacturing in Europe Conference, Brussels, Belgium, 2017; pp 18–19.

2. Laser contact openings for local poly-Si-metal contacts enabling 26.1%-efficient POLO-IBC solar cells

3. Heavily doped polysilicon-contact solar cells

4. Exceeding conversion efficiency of 26% by heterojunction interdigitated back contact solar cell with thin film Si technology

5. Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26%

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