Field-Free Spin–Orbit Torque Switching via Oscillatory Interlayer Dzyaloshinskii–Moriya Interaction for Advanced Memory Applications
Author:
Affiliation:
1. Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
2. Corporate Research, Taiwan, Semiconductor Manufacturing Company, Hsinchu 30078, Taiwan
Funder
Center of Atomic Initiative for New Materials, National Taiwan University
National Taiwan University
National Science and Technology Council
Taiwan Semiconductor Manufacturing Company
Publisher
American Chemical Society (ACS)
Subject
General Materials Science,Biomedical Engineering,General Chemical Engineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acsmaterialslett.3c01376
Reference65 articles.
1. Spin-orbit torque magnetization switching of a three-terminal perpendicular magnetic tunnel junction
2. Ultrafast magnetization switching by spin-orbit torques
3. Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum
4. Spin transfer torque devices utilizing the giant spin Hall effect of tungsten
5. Single-shot dynamics of spin–orbit torque and spin transfer torque switching in three-terminal magnetic tunnel junctions
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