Electrical Characteristics of Carbon Nanotube Devices Prepared with Single Oxidative Point Defects-Reference-Cited by-同舟云学术

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Electrical Characteristics of Carbon Nanotube Devices Prepared with Single Oxidative Point Defects

Published:2012-01-10 Issue:2 Volume:116 Page:1961-1965
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Prisbrey Landon¹,Roundy David¹,Blank Kerstin²,Fifield Leonard S.³,Minot Ethan D.¹

Affiliation:

1. Department of Physics, Oregon State University, Corvallis, Oregon 97331-6507, United States

2. Institute for Molecules and Materials, Radboud University, Nijmegen, The Netherlands

3. Pacific Northwest National Laboratory, Richland, Washington 99354, United States

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp208870c

Reference43 articles.

1. Monitoring Single-Molecule Reactivity on a Carbon Nanotube

2. Label-free single-molecule detection of DNA-hybridization kinetics with a carbon nanotube field-effect transistor

3. Role of Defects in Single-Walled Carbon Nanotube Chemical Sensors

4. Defect-induced negative differential resistance in single-walled carbon nanotubes

5. Modifying the electronic structure of semiconducting single-walled carbon nanotubes byAr+ion irradiation

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