Gallium phosphide/gallium arsenide phosphide strained-layer superlattice electrodes: effect of the terminating layer on photoelectrochemical properties-Reference-Cited by-同舟云学术

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Gallium phosphide/gallium arsenide phosphide strained-layer superlattice electrodes: effect of the terminating layer on photoelectrochemical properties

Published:1988-06 Issue:13 Volume:92 Page:3961-3965
ISSN:0022-3654
Container-title:The Journal of Physical Chemistry
language:en
Short-container-title:J. Phys. Chem.

Author:

Zuhoski Steven P.,Johnson Phelps B.,Ellis Arthur B.,Biefeld R. M.,Ginley D. S.

Publisher

American Chemical Society (ACS)

Subject

Physical and Theoretical Chemistry,General Engineering

Link

https://pubs.acs.org/doi/pdf/10.1021/j100324a054

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Earth-Rich Transition Metal Phosphide for Energy Conversion and Storage;Advanced Energy Materials;2016-05-11

2. Study on the Structure and Property of the Neutral GaxPy (x+y=8) and Anionic Gallium Phosphide Clusters Using DFT;Acta Physico-Chimica Sinica;2006-10

3. Gallium arsenide nanocrystals prepared in quinoline;The Journal of Physical Chemistry;1991-07

4. AN ANALYSIS OF CHARGE-TRANSFER RATE CONSTANTS FOR SEMICONDUCTOR LIQUID INTERFACES;ANNU REV PHYS CHEM;1991

5. Single quantum well electrodes for photoelectrochemistry;The Journal of Physical Chemistry;1990-05

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