Investigation of AlMe3, BEt3, and ZnEt2 as Co-Reagents for Low-Temperature Copper Metal ALD/Pulsed-CVD-Reference-Cited by-同舟云学术

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Investigation of AlMe3, BEt3, and ZnEt2 as Co-Reagents for Low-Temperature Copper Metal ALD/Pulsed-CVD

Published:2010-08-11 Issue:17 Volume:22 Page:4844-4853
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Vidjayacoumar Balamurugan¹,Emslie David J. H.¹,Clendenning Scott B.²,Blackwell James M.²,Britten James F.¹,Rheingold Arnold³

Affiliation:

1. Department of Chemistry, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4M1, Canada

2. Intel Corporation, RA3-252, 2501 Northwest 229th Avenue, Hillsboro, Oregon 97124

3. Department of Chemistry and Biochemistry, University of California−San Diego, 9500 Gilman Drive, MC 0332, La Jolla, California, 92093-0332

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm101442e

Reference89 articles.

1. Copper Metallization for High Performance Silicon Technology

2. An introduction to Cu electromigration

3. The application of atomic layer deposition for metallization of 65 nm and beyond

4. Metallization and nanostructuring of semiconductor surfaces by galvanic displacement processes

5. Electroless processes for micro- and nanoelectronics

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