Evolution of Surface-Assisted Oxidation of GaAs (100) by Gas-Phase N2O, NO, and O2 under Near-Ambient Pressure Conditions-Reference-Cited by-同舟云学术

Evolution of Surface-Assisted Oxidation of GaAs (100) by Gas-Phase N2O, NO, and O2 under Near-Ambient Pressure Conditions

Published:2014-12-24 Issue:1 Volume:119 Page:262-270
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Zhang Xueqiang¹,Ptasinska Sylwia¹

Affiliation:

1. Radiation Laboratory, ‡Department of Chemistry and Biochemistry, and §Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, United States

Funder

Basic Energy Sciences

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp508245s

Reference56 articles.

1. Semiconducting and other major properties of gallium arsenide

2. Wet-Chemical Passivation of InAs: Toward Surfaces with High Stability and Low Toxicity

3. Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics

4. The potential of III-V semiconductors as terrestrial photovoltaic devices

5. RF transistors: Recent developments and roadmap toward terahertz applications

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