Fabrication of Silicon Nanowires with Precise Diameter Control Using Metal Nanodot Arrays as a Hard Mask Blocking Material in Chemical Etching-Reference-Cited by-同舟云学术

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Fabrication of Silicon Nanowires with Precise Diameter Control Using Metal Nanodot Arrays as a Hard Mask Blocking Material in Chemical Etching

Published:2010-06-15 Issue:13 Volume:22 Page:4111-4116
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Huang Jinquan¹,Chiam Sing Yang²,Tan Hui Huang¹,Wang Shijie²,Chim Wai Kin¹

Affiliation:

1. Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117576, Singapore

2. Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, 117602, Singapore

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm101121c

Reference37 articles.

1. Silicon Vertically Integrated Nanowire Field Effect Transistors

2. Synthesis and Fabrication of High-Performance n-Type Silicon Nanowire Transistors

3. Single Crystal Nanowire Vertical Surround-Gate Field-Effect Transistor

4. Nanowire electronic and optoelectronic devices

5. Multiplexed electrical detection of cancer markers with nanowire sensor arrays

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