New Fused Heteroarenes for High-Performance Field-Effect Transistors-Reference-Cited by-同舟云学术

New Fused Heteroarenes for High-Performance Field-Effect Transistors

Published:2009-05-12 Issue:13 Volume:21 Page:2595-2597
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Wang Jie-Yu¹,Zhou Yan¹²,Yan Jing¹,Ding Lin¹,Ma Yuguo¹,Cao Yong²,Wang Jian²,Pei Jian¹

Affiliation:

1. The Key Laboratories of Bioorganic Chemistry and Molecular Engineering and of Polymer Chemistry and Physics of Ministry of Education, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871

2. Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, the Key Laboratory of Specially Functional Materials of Ministry of Education, Guangzhou 510640, China

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm900568k

Reference24 articles.

1. Organic Semiconductors for Solution-Processable Field-Effect Transistors (OFETs)

2. Organic Thin Film Transistors for Large Area Electronics

3. High Mobility Single-Crystal Field-Effect Transistors from Bisindoloquinoline Semiconductors

4. 2,7-Diphenyl[1]benzothieno[3,2-b]benzothiophene, A New Organic Semiconductor for Air-Stable Organic Field-Effect Transistors with Mobilities up to 2.0 cm2 V-1 s-1

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