Charge State Control and Relaxation in an Atomically Doped Silicon Device-Reference-Cited by-同舟云学术

Charge State Control and Relaxation in an Atomically Doped Silicon Device

Published:2007-06-13 Issue:7 Volume:7 Page:2000-2003
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Andresen Søren E. S.¹,Brenner Rolf¹,Wellard Cameron J.¹,Yang Changyi¹,Hopf Toby¹,Escott Christopher C.¹,Clark Robert G.¹,Dzurak Andrew S.¹,Jamieson David N.¹,Hollenberg Lloyd C. L.¹

Affiliation:

1. Australian Research Council Centre of Excellence for Quantum Computer Technology, University of New South Wales, Sydney, New South Wales 2052, Australia, and Australian Research Council Centre of Excellence for Quantum Computer Technology, University of Melbourne, Victoria 3010, Australia

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl070797t

Reference28 articles.

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3. Charge-based quantum computing using single donors in semiconductors

4. Global control and fast solid-state donor electron spin quantum computing

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