Proton-Gated Synaptic Transistors, Based on an Electron-Beam Patterned Nafion Electrolyte-Reference-Cited by-同舟云学术

Proton-Gated Synaptic Transistors, Based on an Electron-Beam Patterned Nafion Electrolyte

Published:2023-04-06 Issue:15 Volume:15 Page:19279-19289
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Mohanty Himadri Nandan¹²,Tsuruoka Tohru²^ORCID,Mohanty Jyoti Ranjan¹,Terabe Kazuya²

Affiliation:

1. Nanomagnetism and Microscopy Laboratory, Department of Physics, Indian Institute of Technology Hyderabad, Kandi, Sangareddy 502285, Telangana, India

2. Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Namiki 1-1, Tsukuba 305-004, Japan

Funder

Japan Society of Applied Physics

National Institute for Materials Science

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c00756

Reference51 articles.

1. Emerging neuromorphic devices

2. A comprehensive review on emerging artificial neuromorphic devices

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4. Temporal correlation detection using computational phase-change memory

5. Do we have brain to spare?

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