Vertically Stackable Ovonic Threshold Switch Oscillator Using Atomic Layer Deposited Ge<sub>0.6</sub>Se<sub>0.4</sub> Film for High-Density Artificial Neural Networks-Reference-Cited by-同舟云学术

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Vertically Stackable Ovonic Threshold Switch Oscillator Using Atomic Layer Deposited Ge_0.6Se_0.4 Film for High-Density Artificial Neural Networks

Published:2024-03-16 Issue:12 Volume:16 Page:15032-15042
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Jeon Jeong Woo¹^ORCID,Park Byongwoo¹^ORCID,Jang Yoon Ho¹,Lee Soo Hyung¹,Jeon Sangmin¹,Han Janguk¹,Ryoo Seung Kyu¹,Kim Kyung Do¹,Shim Sung Keun¹,Cheong Sunwoo¹,Choi Wonho¹^ORCID,Jeon Gwangsik¹,Kim Sungjin¹,Yoo Chanyoung²^ORCID,Han Joon-Kyu¹,Hwang Cheol Seong¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Gwanak-ro 1, Daehagdong, Gwanak-gu, Seoul 08826, Republic of Korea

2. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c18625

Reference44 articles.

1. Mastering the game of Go without human knowledge

2. Machine learning: Trends, perspectives, and prospects

3. Speech Recognition using Recurrent Neural Networks

4. Neuro-inspired computing chips

5. In-memory computing with resistive switching devices

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