Multiple-State Nonvolatile Memory Based on Ultrathin Indium Oxide Film via Liquid Metal Printing-Reference-Cited by-同舟云学术

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Multiple-State Nonvolatile Memory Based on Ultrathin Indium Oxide Film via Liquid Metal Printing

Published:2023-05-18 Issue:21 Volume:15 Page:25838-25848
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Huang Chang-Hsun¹,Weng Chen-Yuan²,Chen Kuan-Hung¹,Chou Yi²,Wu Tian-Li³^ORCID,Chou Yi-Chia¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan

2. Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan

3. International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan

Funder

National Taiwan University

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c03002

Reference62 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. 2D materials: to graphene and beyond

3. Valleytronics in 2D materials

4. 2D materials for quantum information science

5. 2D nanomaterials: graphene and transition metal dichalcogenides

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