Efficient Quantum Dot Light-Emitting Diode Enabled by a Thick Inorganic CdS Interfacial Modification Layer-Reference-Cited by-同舟云学术

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Efficient Quantum Dot Light-Emitting Diode Enabled by a Thick Inorganic CdS Interfacial Modification Layer

Published:2023-11-09 Issue:46 Volume:15 Page:54185-54191
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Yang Chunyan¹,Ma Rui¹,Wang Zhe²³,Wang Yuanyuan²³,Yu Chaoyu²³,Liu Yonggang¹,Wan Yanfu¹,Li Jianfeng¹^ORCID,Tong Junfeng¹^ORCID,Zhang Peng¹,Zhang Heng²³^ORCID

Affiliation:

1. School of Materials Science and Engineering, Lanzhou Jiaotong University, Lanzhou 730000, China

2. State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Nanning 530004,China

3. School of Resources, Environment and Materials, Guangxi University, Nanning 530004, China

Funder

Specific Research Project of Guangxi for Research Bases and Talents

West Light Foundation, Chinese Academy of Sciences

University Project of Gansu Province

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c12897

Reference45 articles.

1. Solution-processed, high-performance light-emitting diodes based on quantum dots

2. High-efficiency light-emitting devices based on quantum dots with tailored nanostructures

3. Emergence of colloidal quantum-dot light-emitting technologies

4. Solution-processed green and blue quantum-dot light-emitting diodes with eliminated charge leakage

5. Highly efficient and stable InP/ZnSe/ZnS quantum dot light-emitting diodes

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