Scalable High-Mobility Graphene/hBN Heterostructures-Reference-Cited by-同舟云学术

Scalable High-Mobility Graphene/hBN Heterostructures

Published:2023-07-31 Issue:31 Volume:15 Page:37794-37801
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Martini Leonardo¹^ORCID,Mišeikis Vaidotas¹²,Esteban David³,Azpeitia Jon³,Pezzini Sergio⁴^ORCID,Paletti Paolo¹²,Ochapski Michał W.¹²,Convertino Domenica¹^ORCID,Hernandez Mar Garcia³,Jimenez Ignacio³,Coletti Camilla¹²^ORCID

Affiliation:

1. Center for Nanotechnology Innovation@NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy

2. Graphene Labs, Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova, Italy

3. Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, E-28049 Madrid, Spain

4. NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy

Funder

H2020 Future and Emerging Technologies

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c06120

Reference54 articles.

1. Boron nitride substrates for high-quality graphene electronics

2. One-Dimensional Electrical Contact to a Two-Dimensional Material

3. High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films

4. Substrate-induced band gap in graphene on hexagonal boron nitride:Ab initiodensity functional calculations

5. Disorder in van der Waals heterostructures of 2D materials

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