Ultralow Electric Current-Assisted Magnetization Switching due to Thermally Engineered Magnetic Anisotropy-Reference-Cited by-同舟云学术

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Ultralow Electric Current-Assisted Magnetization Switching due to Thermally Engineered Magnetic Anisotropy

Published:2024-02-01 Issue:6 Volume:16 Page:7463-7469
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Du Qin¹,Wang Wenli¹,Tang Fan¹,Su Wei¹,Wu Jingen¹,Hu Zhongqiang¹^ORCID,Wang Zhiguang¹^ORCID,Liu Ming¹^ORCID

Affiliation:

1. State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China

Funder

Natural Science Foundation of Shaanxi Province

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c17325

Reference47 articles.

1. Magnetoresistive Random Access Memory

2. High-density magnetoresistive random access memory operating at ultralow voltage at room temperature

3. Spintronics for Energy- Efficient Computing: An Overview and Outlook

4. Thermally assisted MRAM

5. Thermally Assisted Switching in Exchange-Biased Storage Layer Magnetic Tunnel Junctions

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1. Efficient electrical control of magnetization switching and ferromagnetic resonance in flexible La0.7Sr0.3MnO3 films;Nano Research;2024-08-20

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