Erasable Domain Wall Current-Dominated Resistive Switching in BiFeO3 Devices with an Oxide–Metal Interface
Author:
Affiliation:
1. Department of Mechanical Engineering & Mechanics, Drexel University, Philadelphia, Pennsylvania 19104-2875, United States
2. State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, P. R. China
Funder
National Natural Science Foundation of China
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.3c02710
Reference40 articles.
1. Polarization reversal induced by heating-cooling cycles in MgO doped lithium niobate crystals
2. Direct writing of ferroelectric domains on strontium barium niobate crystals using focused ultraviolet laser light
3. Mechanical Writing of Ferroelectric Polarization
4. Strain induced enhancement of erasable domain wall current in epitaxial BiFeO3 thin films
5. The Observation of Domain‐Wall Current Transients Along with Charge Injection at Elevated Temperatures
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