One-Stage Process of Reduction, Fluorination, and Doping with Nitrogen of Graphene Oxide Films-Reference-Cited by-同舟云学术

One-Stage Process of Reduction, Fluorination, and Doping with Nitrogen of Graphene Oxide Films

Published:2023-11-03 Issue: Volume: Page:
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Mitiushev Nikita¹²^ORCID,Kabachkov Eugene³⁴^ORCID,Laptinskiy Kirill⁵^ORCID,Firsov Anatoly²⁶,Panin Gennady²^ORCID,Baranov Andrei²⁷^ORCID

Affiliation:

1. Department of Materials Science, Moscow State University, 119991 Moscow, Russia

2. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, Moscow District, Chernogolovka 142432, Russia

3. Institute of Solid State Physics, Moscow District, Chernogolovka 142432, Russia

4. Federal Research Center of Problems of Chemical Physics and Medicinal Chemistry, Russian Academy of Sciences, Academician Semenov Avenue 1, Moscow Region, Chernogolovka 142432, Russia

5. D.V. Skobeltsyn Research Institute of Nuclear Physics, Moscow State University, 119991 Moscow, Russia

6. Scientific Research Institute of System Analysis, Moscow 117218, Russia

7. Chemistry Department, Moscow State University, 119991 Moscow, Russia

Funder

Russian Science Foundation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c12567

Reference50 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. First principles calculations of the electronic and chemical properties of graphene, graphane, and graphene oxide

3. Physical properties and device applications of graphene oxide

4. Defects in Graphene Oxide as Structural Motifs

5. Topological Impact of Delocalization on the Stability and Band Gap of Partially Oxidized Graphene

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