Type-II Bi2O2Se/MoTe2 van der Waals Heterostructure Photodetectors with High Gate-Modulation Photovoltaic Performance-Reference-Cited by-同舟云学术

Type-II Bi₂O₂Se/MoTe₂ van der Waals Heterostructure Photodetectors with High Gate-Modulation Photovoltaic Performance

Published:2023-03-29 Issue:14 Volume:15 Page:18101-18113
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Dan Zhiying¹²,Yang Baoxiang¹,Song Qiqi³,Chen Jianru¹,Li Hengyi¹,Gao Wei¹^ORCID,Huang Le³^ORCID,Zhang Menglong¹,Yang Mengmeng¹,Zheng Zhaoqiang³^ORCID,Huo Nengjie¹^ORCID,Han Lixiang¹,Li Jingbo¹

Affiliation:

1. Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China

2. Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen 9747AG, The Netherlands

3. School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China

Funder

Guangdong Science and Technology Department

Guangzhou Science, Technology and Innovation Commission

National Natural Science Foundation of China

Guangzhou Basic and Applied Basic Research Project

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

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