Highly Responsive Near-Infrared Si/Sb<sub>2</sub>Se<sub>3</sub> Photodetector via Surface Engineering of Silicon-Reference-Cited by-同舟云学术

Highly Responsive Near-Infrared Si/Sb₂Se₃ Photodetector via Surface Engineering of Silicon

Published:2023-06-16 Issue:25 Volume:15 Page:30443-30454
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Singh Yogesh¹²,Parmar Rahul³,Srivastava Avritti¹²,Yadav Reena¹²,Kumar Kapil¹²,Rani Sanju¹²,Shashi ⁴,Srivastava Sanjay K.¹²^ORCID,Husale Sudhir¹²,Sharma Mahesh¹²,Kushvaha Sunil Singh¹²^ORCID,Singh Vidya Nand¹²^ORCID

Affiliation:

1. Academy of Scientific and Innovative Research (AcSIR), Ghaziabad-201002, India

2. CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi, 110012, India

3. Elettra Sincrotrone, s.s. 14 km 163,500 in Area Science Park, 34149, Basovizza Trieste Italy

4. Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400 005, India

Funder

Council of Scientific and Industrial Research, India

Department of Science and Technology, Ministry of Science and Technology, India

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c04043

Reference44 articles.

1. Hot Electron Generation in Silicon Micropyramids Covered with Nanometer-Thick Gold Films for Near-Infrared Photodetectors

2. Thin-Film III–V Photodetectors Integrated on Silicon-on-Insulator Photonic ICs

3. High-performance Ge-on-Si photodetectors

4. Room-temperature sub-band gap optoelectronic response of hyperdoped silicon

5. State-of-the-art all-silicon sub-bandgap photodetectors at telecom and datacom wavelengths

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