Tailoring Ultrafast Near-Band Gap Photoconductive Response in GeS by Zero-Valent Cu Intercalation-Reference-Cited by-同舟云学术

Tailoring Ultrafast Near-Band Gap Photoconductive Response in GeS by Zero-Valent Cu Intercalation

Published:2024-03-26 Issue:13 Volume:16 Page:16445-16452
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Khanmohammadi Sepideh¹,Kushnir Friedman Kateryna¹^ORCID,Chen Ethan²^ORCID,Kastuar Srihari M.³^ORCID,Ekuma Chinedu E.³,Koski Kristie J.²^ORCID,Titova Lyubov V.¹^ORCID

Affiliation:

1. Department of Physics, Worcester Polytechnic Institute, Worcester, Massachusetts 01609, United States

2. Department of Chemistry, University of California Davis, Davis, California 95616, United States

3. Department of Physics, Lehigh University, Bethlehem, Pennsylvania 18015, United States

Funder

Basic Energy Sciences

Division of Materials Research

Gapontsev Family Collaborative Venture Fund

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c19251

Reference58 articles.

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4. Polarized Band-Edge Emission and Dichroic Optical Behavior in Thin Multilayer GeS

5. Germanium monosulfide monolayer: a novel two-dimensional semiconductor with a high carrier mobility

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