Electrodeposited ZnO—Nanowire/Cu2O Photovoltaic Device with Highly Resistive ZnO Intermediate Layer-Reference-Cited by-同舟云学术

Electrodeposited ZnO—Nanowire/Cu2O Photovoltaic Device with Highly Resistive ZnO Intermediate Layer

Published:2014-08-07 Issue:16 Volume:6 Page:13461-13469
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Izaki Masanobu¹,Ohta Takayuki¹,Kondo Misaki¹,Takahashi Toshiaki¹,Mohamad Fariza Binti²,Zamzuri Mohd¹,Sasano Junji¹,Shinagawa Tsutomu³,Pauporté Thierry⁴

Affiliation:

1. Graduate School of Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan

2. Faculty of Electrical & Electronic Engineering, Universiti Tun Hussein Onn Malaysia, 86400 Parit Raja, Batu Pahat, Johor Malaysia

3. Electronics Materials Department, Osaka Municipal Technical Research Institute, Osaka, 536-8553, Japan

4. Institut de Recherche de Chimie Paris, CNRS − Chimie ParisTech, UMR8247, 11 rue Pierre et Marie Curie, Paris75005, France

Funder

Japan Society for the Promotion of Science

New Energy and Industrial Technology Development Organization

Amano Industrial Research Institute Foundation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am502246j

Reference36 articles.

1. Structural and Electrical Characterizations of Electrodeposited p-Type Semiconductor Cu[sub 2]O Films

2. Heterojunction solar cell with 2% efficiency based on a Cu2O substrate

3. Deep level transient spectroscopy of cyanide treated polycrystalline p-Cu2O/n-ZnO solar cell

4. Electrochemically constructed p-Cu2O/n-ZnO heterojunction diode for photovoltaic device

5. High-Efficiency Cu2O-Based Heterojunction Solar Cells Fabricated Using a Ga2O3Thin Film as N-Type Layer

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