High Temperature Polyimide Containing Anthracene Moiety and Its Structure, Interface, and Nonvolatile Memory Behavior-Reference-Cited by-同舟云学术

High Temperature Polyimide Containing Anthracene Moiety and Its Structure, Interface, and Nonvolatile Memory Behavior

Published:2011-02-21 Issue:3 Volume:3 Page:765-773
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Park Samdae¹,Kim Kyungtae¹,Kim Dong Min¹,Kwon Wonsang¹,Choi Junman¹,Ree Moonhor¹

Affiliation:

1. Division of Advanced Materials Science, Department of Chemistry, Pohang Accelerator Laboratory, Center for Electro-Photo Behaviors in Advanced Molecular Systems, BK School of Molecular Science, and Polymer Research Institute, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am101125d

Reference54 articles.

1. Conductance Switching in Single Molecules Through Conformational Changes

2. Reversible, Nanometer-Scale Conductance Transitions in an Organic Complex

3. Evidence of switching and rectification by a single molecule effected with a scanning tunneling microscope

4. Single-layer organic memory devices based on N,N′-di(naphthalene-l-yl)-N,N′-diphenyl-benzidine

5. Electrical switching and transport in the Si/organic monolayer/Au and Si/organic bilayer/Al devices

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