Transferable Force Field for Gallium Nitride Crystal Growth from the Melt Using On-The-Fly Active Learning
Author:
Affiliation:
1. Department of Chemical and Biomolecular Engineering, Johns Hopkins University, Baltimore, Maryland 21218, United States
2. Johns Hopkins University Applied Physics Laboratory, 11100 Johns Hopkins Rd., Laurel, Maryland 20723, United States
Funder
Johns Hopkins University
Office of Advanced Cyberinfrastructure
Publisher
American Chemical Society (ACS)
Subject
Physical and Theoretical Chemistry,Computer Science Applications
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jctc.3c00587
Reference61 articles.
1. Atomistic modeling of III–V nitrides: modified embedded-atom method interatomic potentials for GaN, InN and Ga1−xInxN
2. On the atomic structures, mobility and interactions of extended defects in GaN: dislocations, tilt and twin boundaries
3. New empirical approach for the structure and energy of covalent systems
4. Molecular dynamics simulation of III–V compound semiconductor growth with MBE
5. The use of Abell–Tersoff potentials in atomistic simulations of InGaAsSb/GaAs
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