Performance of Metamorphic Transistors with δ-Doped Structures
Author:
Affiliation:
1. Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101, Republic of China
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/jp204203e
Reference17 articles.
1. Improved performance of non-annealed ohmic-recess metamorphic high electron mobility transistor
2. High-temperature thermal stability performance in /spl delta/-doped In/sub 0.425/Al/sub 0.575/As--In/sub 0.65/Ga/sub 0.35/As metamorphic HEMT
3. Comprehensive Characterization of In[sub 0.45]Al[sub 0.55]As∕In[sub 0.5]Ga[sub 0.5]As∕In[sub x]Al[sub 1−x]As Metamorphic High-Electron-Mobility Transistors on GaAs Substrates
4. High-performance double-recessed InAlAs/InGaAs power metamorphic HEMT on GaAs substrate
5. An optical link for microwave clock distribution using optical carrier suppression and DC drift compensation
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