Theoretical Study of the Low Lying States of Ga2X (X = P, As)-Reference-Cited by-同舟云学术

Theoretical Study of the Low Lying States of Ga2X (X = P, As)

Published:2010-08-16 Issue:35 Volume:114 Page:9515-9522
ISSN:1089-5639
Container-title:The Journal of Physical Chemistry A
language:en
Short-container-title:J. Phys. Chem. A

Author:

Hayashi S.¹,Dargelos A.¹,Pouchan C.¹

Affiliation:

1. IPREM-UMR5254-ECP Groupe Chimie Théorique et Réactivité, Université de Pau et des Pays de l’Adour, Hélioparc Pau-Pyrénées, 2 Av. P. Angot, 64053 Pau Cedex9, France

Publisher

American Chemical Society (ACS)

Subject

Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp102943q

Reference37 articles.

1. Electronic structure of GaAs2

2. Electronic states and potential energy curves of Ga2P, GaP2, and their ions

3. Potential energy surfaces of electronic states of AlP2, Al2P and their ions

4. Spectroscopic Constants for GaAs2-, GaAs2, Ga2As-, and Ga2As

5. Electronic states and vibrational frequencies of the triatomic Ga2N, GaN2, and their cations and anions

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