Control of Doping in Cu2SnS3 through Defects and Alloying-Reference-Cited by-同舟云学术

Control of Doping in Cu2SnS3 through Defects and Alloying

Published:2014-08-19 Issue:17 Volume:26 Page:4951-4959
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Baranowski Lauryn L.¹²,Zawadzki Pawel¹,Christensen Steven¹,Nordlund Dennis³,Lany Stephan¹,Tamboli Adele C.¹²,Gedvilas Lynn¹,Ginley David S.¹,Tumas William¹,Toberer Eric S.¹²,Zakutayev Andriy¹

Affiliation:

1. National Renewable Energy Laboratory, Golden, Colorado 80401, United States

2. Physics Department, Colorado School of Mines, Golden, Colorado 80401, United States

3. Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94023, United States

Funder

National Science Foundation

U.S. Department of Energy

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm501339v

Reference58 articles.

1. Photovoltaic characteristics of thin films of Cu2SnS3

2. Phase relations and optical properties of semiconducting ternary sulfides in the system Cu–Sn–S

3. Structural and optical properties of Cu2SnS3 sprayed thin films

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