Solution-Processed Ga<sub>2</sub>O<sub>3</sub> Films via Thermal Annealing for Solar Blind Ultraviolet Photovoltaic Photodetectors with High Photoresponsivity and Fast Response-Reference-Cited by-同舟云学术

Solution-Processed Ga₂O₃ Films via Thermal Annealing for Solar Blind Ultraviolet Photovoltaic Photodetectors with High Photoresponsivity and Fast Response

Published:2023-09-26 Issue:10 Volume:1 Page:1715-1720
ISSN:2771-9855
Container-title:ACS Applied Optical Materials
language:en
Short-container-title:ACS Appl. Opt. Mater.

Author:

Zhang Dan¹,Liang Jiarong¹,Li Fangzhou²,Liu Yanghui²^ORCID,Zheng Wei²^ORCID

Affiliation:

1. School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China

2. State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou 510275, China

Funder

Excellent Young Scientists Fund

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaom.3c00271

Reference37 articles.

1. High Responsivity and High Rejection Ratio of Self-Powered Solar-Blind Ultraviolet Photodetector Based on PEDOT:PSS/β-Ga2O3 Organic/Inorganic p–n Junction

2. Ultrasensitive Self-Powered Solar-Blind Deep-Ultraviolet Photodetector Based on All-Solid-State Polyaniline/MgZnO Bilayer

3. Pt/ZnGa₂O₄/p-Si Back-to-Back Heterojunction for Deep UV Sensitive Photovoltaic Photodetection with Ultralow Dark Current and High Spectral Selectivity

4. Ultrahigh EQE (15%) Solar‐Blind UV Photovoltaic Detector with Organic–Inorganic Heterojunction via Dual Built‐In Fields Enhanced Photogenerated Carrier Separation Efficiency Mechanism

5. All-silicon photovoltaic detectors with deep ultraviolet selectivity

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