The Work Function Improvement on Indium−Tin−Oxide Epitaxial Layers by Doping Treatment for Organic Light-Emitting Device Applications-Reference-Cited by-同舟云学术

The Work Function Improvement on Indium−Tin−Oxide Epitaxial Layers by Doping Treatment for Organic Light-Emitting Device Applications

Published:2007-05-18 Issue:23 Volume:111 Page:8372-8376
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Ho Jyh-Jier¹,Chen Chin-Ying²,Hsiao Robert Y.³,Ho Olivia L.⁴

Affiliation:

1. Department of Electrical Eng., National Taiwan Ocean University, Keelung, Taiwan 202, Republic of China

2. Department of Computer Science and Information Engineering, Fortune Institute of Technology, Chi-shan Town, Kaohsiung, Taiwan 842, Republic of China

3. College of Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801

4. Global Analytical Research & Development, Abbott Laboratories, 1401 Sheridan Road, North Chicago, Illinois 60064-6292

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp0703408

Reference14 articles.

1. Low resistance indium tin oxide films on large scale glass substrate

2. Organic thin-film transistors for organic light-emitting flat-panel display backplanes

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