Manipulated Growth of GaAs Nanowires: Controllable Crystal Quality and Growth Orientations via a Supersaturation-Controlled Engineering Process-Reference-Cited by-同舟云学术

Manipulated Growth of GaAs Nanowires: Controllable Crystal Quality and Growth Orientations via a Supersaturation-Controlled Engineering Process

Published:2012-11-27 Issue:12 Volume:12 Page:6243-6249
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Han Ning¹,Wang Fengyun¹,Hou Jared J.¹,Yip SenPo¹,Lin Hao¹,Fang Ming¹,Xiu Fei¹,Shi Xiaoling¹,Hung TakFu¹,Ho Johnny C.¹

Affiliation:

1. Department of Physics and Materials Science, and ‡Centre for Functional Photonics (CFP), City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong S.A.R., P. R. China

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg301452d

Reference30 articles.

1. Growth of nanowire superlattice structures for nanoscale photonics and electronics

2. Synthesis and Characterizations of Ternary InGaAs Nanowires by a Two-Step Growth Method for High-Performance Electronic Devices

3. Nanometre-scale electronics with III–V compound semiconductors

4. Solid-phase diffusion mechanism for GaAs nanowire growth

5. Morphology- and Orientation-Controlled Gallium Arsenide Nanowires on Silicon Substrates

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