Tunable Rashba Effect in Two-Dimensional LaOBiS2 Films: Ultrathin Candidates for Spin Field Effect Transistors
Author:
Affiliation:
1. Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208, United States
2. Department of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/nl4027346
Reference49 articles.
1. Coherent spin manipulation without magnetic fields in strained semiconductors
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3. Electronic analog of the electro‐optic modulator
4. Spin splitting in semiconductor heterostructures forB→0
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