Design, Synthesis, and Optoelectronic Properties of the High-Purity Phase in Layered AETMN2 (AE = Sr, Ba; TM = Ti, Zr, Hf) Semiconductors-Reference-Cited by-同舟云学术

Design, Synthesis, and Optoelectronic Properties of the High-Purity Phase in Layered AETMN₂ (AE = Sr, Ba; TM = Ti, Zr, Hf) Semiconductors

Published:2022-04-20 Issue:17 Volume:61 Page:6650-6659
ISSN:0020-1669
Container-title:Inorganic Chemistry
language:en
Short-container-title:Inorg. Chem.

Author:

Shiraishi Akihiro¹,Kimura Shigeru¹,He Xinyi¹,Watanabe Naoto¹,Katase Takayoshi¹^ORCID,Ide Keisuke¹^ORCID,Minohara Makoto²^ORCID,Matsuzaki Kosuke³^ORCID,Hiramatsu Hidenori¹³^ORCID,Kumigashira Hiroshi⁴^ORCID,Hosono Hideo³^ORCID,Kamiya Toshio¹³

Affiliation:

1. Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan

2. Research Institute for Advanced Electronics and Photonics, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan

3. Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan

4. Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Subject

Inorganic Chemistry,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.inorgchem.2c00604

Reference44 articles.