Compounds with Alternating Single and Double Bonds of Antimony and Silicon; Isoelectronic to Ethane-1,2-diimine
Author:
Affiliation:
1. Universität Göttingen, Institut für Anorganische Chemie, Tammannstrasse 4, 37077 Göttingen, Germany
2. National Institute of Technology Calicut, Kozhikode, Kerala 673601, India
Funder
Science and Engineering Research Board
Deutsche Forschungsgemeinschaft
National Institute of Technology Calicut
Fonds der Chemischen Industrie
Publisher
American Chemical Society (ACS)
Subject
Inorganic Chemistry,Physical and Theoretical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.inorgchem.2c03695
Reference51 articles.
1. Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state
2. Influence of silicon on the thermally-induced crystallization process of Si-Sb4Te phase change materials
3. Dislocation motion in Sb-doped SiGe on Si substrate
4. Theory and Calculations of Molecules Containing Heavier Main Group Elements and Fullerenes Encaging Transition Metals: Interplay with Experiment
5. π-Bonding and the Lone Pair Effect in Multiple Bonds Involving Heavier Main Group Elements: Developments in the New Millennium
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