Backward Reconstructions on GaAs(001) Surface Induced by Atomic Hydrogen Reactions: Surfactant-Assisted Low-Temperature Surface Ordering-Reference-Cited by-同舟云学术

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Backward Reconstructions on GaAs(001) Surface Induced by Atomic Hydrogen Reactions: Surfactant-Assisted Low-Temperature Surface Ordering

Published:2013-05-07 Issue:19 Volume:117 Page:9723-9733
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Tereshchenko O. E.¹²,Bakulin A. V.³,Kulkova S. E.³⁴,Eremeev S. V.³⁴

Affiliation:

1. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russian Federation

2. Novosibirsk State University, Novosibirsk 636090, Russian Federation

3. Institute of Strength Physics and Materials Science, 636021 Tomsk, Russian Federation

4. Tomsk State University, 634050 Tomsk, Russian Federation

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp3114094

Reference52 articles.

1. Geometric ordering, surface chemistry, band bending, and work function at decapped GaAs(100) surfaces

2. Surface reconstructions on GaAs(001)

3. Composition and structure of HCl-isopropanol treated and vacuum annealed GaAs(100) surfaces

4. Atomic structure and electronic properties of HCl–isopropanol treated and vacuum annealed GaAs(100) surface

5. GaAs(001) Surface under Conditions of Low As Pressure: Evidence for a Novel Surface Geometry

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