Photoluminescence Intermittency of InGaAs/GaAs Quantum Dots Confined in a Planar Microcavity-Reference-Cited by-同舟云学术

Photoluminescence Intermittency of InGaAs/GaAs Quantum Dots Confined in a Planar Microcavity

Published:2005-09-02 Issue:10 Volume:5 Page:1873-1877
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Wang X. Y.¹,Ma W. Q.¹,Zhang J. Y.¹,Salamo G. J.¹,Xiao Min¹,Shih C. K.¹

Affiliation:

1. Department of Physics, The University of Texas at Austin, Austin, Texas 78712, and Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl051026x

Reference21 articles.

1. Nonexponential “blinking” kinetics of single CdSe quantum dots: A universal power law behavior

2. Random telegraph noise in the photoluminescence of individualGaxIn1−xAsquantum dots in GaAs

3. Fluorescence Intermittency in Self-Assembled InP Quantum Dots

4. Spectroscopic studies of random telegraph noise in self-assembled InP quantum dots in GaInP

5. Two color blinking of single strain-induced GaAs quantum dots

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