High Performance n- and p-Type Field-Effect Transistors Based on Tetrathiafulvalene Derivatives-Reference-Cited by-同舟云学术

High Performance n- and p-Type Field-Effect Transistors Based on Tetrathiafulvalene Derivatives

Published:2006-07-07 Issue:30 Volume:128 Page:9598-9599
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

Naraso ¹,Nishida Jun-ichi¹,Kumaki Daisuke¹,Tokito Shizuo¹,Yamashita Yoshiro¹

Affiliation:

1. Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8502, Japan, and NHK Science and Technical Research Laboratories, Kinuta, Setagaya-ku, Tokyo 157-851, Japan

Publisher

American Chemical Society (ACS)

Subject

Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis

Link

https://pubs.acs.org/doi/pdf/10.1021/ja0630083

Reference24 articles.

1. Synthetic Chemistry for Ultrapure, Processable, and High-Mobility Organic Transistor Semiconductors

2. Building Blocks for n-Type Organic Electronics: Regiochemically Modulated Inversion of Majority Carrier Sign in Perfluoroarene-Modified Polythiophene Semiconductors

3. Organic Thin Film Transistors for Large Area Electronics

4. Synthesis, Crystal Structure, and Transistor Performance of Tetracene Derivatives

5. n-Type Building Blocks for Organic Electronics: A Homologous Family of Fluorocarbon-Substituted Thiophene Oligomers with High Carrier Mobility

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