Enhancement of the Luminescence Intensity of InAs/GaAs Quantum Dots Induced by an External Electric Field-Reference-Cited by-同舟云学术

Enhancement of the Luminescence Intensity of InAs/GaAs Quantum Dots Induced by an External Electric Field

Published:2006-12-13 Issue:1 Volume:7 Page:188-193
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Moskalenko Evgenii S.¹,Larsson Mats¹,Karlsson K. Fredrik¹,Holtz Per Olof¹,Monemar Bo¹,Schoenfeld Winston V.¹,Petroff Pierre M.¹

Affiliation:

1. Department of Physics, Chemistry and Biology (IFM), Linköping University, S-581 83 Linköping, Sweden, and Materials Department, University of California, Santa Barbara, California 93106

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl062417u

Reference25 articles.

1. Electronic states tuning of InAs self-assembled quantum dots

2. Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers

3. Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors

4. Exciton Storage in Semiconductor Self-Assembled Quantum Dots

5. Energy relaxation by multiphonon processes in InAs/GaAs quantum dots

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