Reliably Counting Atomic Planes of Few-Layer Graphene (n > 4)-Reference-Cited by-同舟云学术

Reliably Counting Atomic Planes of Few-Layer Graphene (n > 4)

Published:2010-12-07 Issue:1 Volume:5 Page:269-274
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Koh Yee Kan¹²,Bae Myung-Ho³,Cahill David G.¹,Pop Eric³

Affiliation:

1. Department of Materials Science and Engineering, and Frederick Seitz Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801, United States

2. Department of Mechanical Engineering, National University of Singapore, Singapore

3. Department of Electrical & Computer Engineering, Micro and Nanotechnology Lab, University of Illinois, Urbana, Illinois 61801, United States

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn102658a

Reference34 articles.

1. Graphene: Status and Prospects

2. Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect

3. Ab initiostudy of gap opening and screening effects in gated bilayer graphene

4. Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes

5. Screening and Interlayer Coupling in Multilayer Graphene Field-Effect Transistors

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