Conducting AFM and 2D GIXD Studies on Pentacene Thin Films-Reference-Cited by-同舟云学术

Conducting AFM and 2D GIXD Studies on Pentacene Thin Films

Published:2005-07-30 Issue:33 Volume:127 Page:11542-11543
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

Yang Hoichang¹,Shin Tae Joo¹,Ling Mang-Mang¹,Cho Kilwon¹,Ryu Chang Y.¹,Bao Zhenan¹

Affiliation:

1. Rensselaer Nanotechnology Center, Rensselaer Polytechnic Institute, Troy, New York 12180, NSLS, Brookhaven National Laboratory, Upton, New York 11973, Department of Chemical Engineering, Stanford University, Stanford, California 94305, and Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea

Publisher

American Chemical Society (ACS)

Subject

Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis

Link

https://pubs.acs.org/doi/pdf/10.1021/ja052478e

Reference19 articles.

1. Effects of film morphology and gate dielectric surface preparation on the electrical characteristics of organic-vapor-phase-deposited pentacene thin-film transistors

2. High-Performance OTFTs Using Surface-Modified Alumina Dielectrics

3. Organic Thin Film Transistors for Large Area Electronics

4. Supramolecular organization in ultra-thin films of α-sexithiophene on silicon dioxide

5. The Physical Chemistry of Organic Field-Effect Transistors

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